1SS406,H3F
1SS406,H3F
Active
Description:  DIODE SCHOTTKY 20V 50MA USC
Manufacturer:  Toshiba Semiconductor
Datasheet:   1SS406,H3F Datasheet
History Price: $0.21000
In Stock: 31600
1SS406,H3F vs 1SS82TD-E
Series
-
-
Packaging
Tape & Reel (TR)
Bulk
Status
Active
Active
Diode Type
Schottky
-
Voltage - DC Reverse (Vr) (Max)
20 V
200 V
Current - Average Rectified (Io)
50mA
200mA
Voltage - Forward (Vf) (Max) @ If
550 mV @ 50 mA
1 V @ 100 mA
Speed
Small Signal =< 200mA (Io), Any Speed
-
Reverse Recovery Time (trr)
-
100 ns
Current - Reverse Leakage @ Vr
500 nA @ 20 V
200 nA @ 200 V
Capacitance @ Vr, F
3.9pF @ 0V, 1MHz
1.5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Through Hole
Package / Case
SC-76, SOD-323
DO-204AH, DO-35, Axial
Supplier Device Package
USC
DO-35
Operating Temperature - Junction
125 ℃ (Max)
175 ℃