2N656S
2N656S
Active
Description:  POWER BJT
Manufacturer:  Microchip Technology
Datasheet:   2N656S Datasheet
History Price: $38.83500
In Stock: 1600
2N656S vs 2N696
Part No
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Active
Transistor Type
NPN
NPN
Current - Collector (Ic) (Max)
12 A
-
Voltage - Collector Emitter Breakdown (Max)
60 V
40 V
Vce Saturation (Max) @ Ib, Ic
-
1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max)
-
10μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
20 @ 150mA, 10V
Power - Max
-
600 mW
Frequency - Transition
-
-
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
TO-205AA, TO-5-3 Metal Can
Supplier Device Package
TO-5AA
TO-5AA