2N657S
2N657S
Active
Description:  POWER BJT
Manufacturer:  Microchip Technology
Datasheet:   2N657S Datasheet
History Price: $38.83500
In Stock: 17200
2N657S vs 2N6673
Part No
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Active
Transistor Type
NPN
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Current - Collector (Ic) (Max)
-
-
Voltage - Collector Emitter Breakdown (Max)
40 V
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Vce Saturation (Max) @ Ib, Ic
1.5V @ 15mA, 150mA
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Current - Collector Cutoff (Max)
10μA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 10V
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Power - Max
600 mW
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Frequency - Transition
-
-
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
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Mounting Type
Through Hole
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Package / Case
TO-205AA, TO-5-3 Metal Can
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Supplier Device Package
TO-5AA
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