EPC2007
EPC2007
Obsolete
Description:  GANFET N-CH 100V 6A DIE OUTLINE
Manufacturer:  EPC
Datasheet:   EPC2007 Datasheet
History Price: Obsolete
In Stock: 16000
EPC2007 vs EPC8002
Part No
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Obsolete
Active
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
65 V
Current - Continuous Drain (Id) @ 25℃
6A (Ta)
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
5V
Rds On (Max) @ Id, Vgs
30mOhm @ 6A, 5V
530mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id
2.5V @ 1.2mA
2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
2.8 nC @ 5 V
-
Vgs (Max)
+6V, -5V
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
205 pF @ 50 V
21 pF @ 32.5 V
FET Feature
-
-
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 125 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
Die
Die
Package / Case
Die
Die