EPC2050
EPC2050
Active
Description:  TRANS GAN BUMPED DIE
Manufacturer:  EPC
Datasheet:   EPC2050 Datasheet
History Price: $6.07000
In Stock: 5600
EPC2050 vs EPC2055
Part No
Manufacturer
Series
-
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
-
N-Channel
Technology
-
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
-
40 V
Current - Continuous Drain (Id) @ 25℃
-
29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
5V
Rds On (Max) @ Id, Vgs
-
3.6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id
-
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
-
8.5 nC @ 5 V
Vgs (Max)
-
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
-
1111 pF @ 20 V
FET Feature
-
Standard
Power Dissipation (Max)
-
-
Operating Temperature
-
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
-
Surface Mount
Supplier Device Package
-
Die
Package / Case
-
Die