Series
eGaN
Automotive, AEC-Q101, eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
80 V
Current - Continuous Drain (Id) @ 25℃
48A (Ta)
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
5V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 25A, 5V
17mOhm @ 11A, 5V
Vgs(th) (Max) @ Id
2.5V @ 9mA
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
14.8 nC @ 5 V
4 nC @ 5 V
Vgs (Max)
+6V, -4V
+5.75V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1895 pF @ 50 V
415 pF @ 50 V
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
Die
Die
