EPC2101ENGRT
EPC2101ENGRT
Discontinued
Description:  GAN TRANS ASYMMETRICAL HALF BRID
Manufacturer:  EPC
History Price: Discontinued at Digi-Key
In Stock: 17260
EPC2101ENGRT vs EPC2102
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Discontinued
Active
FET Type
2 N-Channel (Half Bridge)
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
60V
60V
Current - Continuous Drain (Id) @ 25℃
9.5A, 38A
23A
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 5V
4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2mA
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
2.7nC @ 5V
6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 30V
830pF @ 30V
Power - Max
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
Die
Die
Supplier Device Package
Die
Die