EPC2111
EPC2111
Active
Description:  GAN TRANS ASYMMETRICAL HALF BRID
Manufacturer:  EPC
Datasheet:   EPC2111 Datasheet
History Price: $3.06000
In Stock: 2160
EPC2111 vs EPC2103
Part No
Manufacturer
Series
-
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
2 N-Channel (Half Bridge)
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
30V
80V
Current - Continuous Drain (Id) @ 25℃
16A (Ta)
28A
Rds On (Max) @ Id, Vgs
19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
5.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 5mA
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
2.2nC @ 5V, 5.7nC @ 5V
6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
230pF @ 15V, 590pF @ 15V
760pF @ 40V
Power - Max
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
Die
Die
Supplier Device Package
Die
Die