NTE639
NTE639
Active
Description:  DIODE GEN PURP 1.3KV 3A DO201AD
Manufacturer:  NTE Electronics
Datasheet:   NTE639 Datasheet
History Price: $0.24000
In Stock: 15600
NTE639 vs NTE635
Part No
Series
-
-
Packaging
Bag
Bag
Status
Active
Active
Diode Type
Standard
Avalanche
Voltage - DC Reverse (Vr) (Max)
1300 V
400 V
Current - Average Rectified (Io)
3A
1.9A
Voltage - Forward (Vf) (Max) @ If
1 V @ 3 A
1.05 V @ 2 A
Speed
Standard Recovery >500ns, >200mA (Io)
Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)
-
50 ns
Current - Reverse Leakage @ Vr
5 μA @ 1300 V
5 μA @ 400 V
Capacitance @ Vr, F
50pF @ 4V, 1MHz
80pF @ 0V, 1MHz
Mounting Type
Through Hole
Through Hole
Package / Case
DO-201AD, Axial
SOD-57, Axial
Supplier Device Package
DO-201AD
SOD-57
Operating Temperature - Junction
-65 ℃ ~ 125 ℃
-65 ℃ ~ 175 ℃