NTE639
NTE639
Active
Description:  DIODE GEN PURP 1.3KV 3A DO201AD
Manufacturer:  NTE Electronics
Datasheet:   NTE639 Datasheet
History Price: $0.24000
In Stock: 15600
NTE639 vs NTE648
Part No
Series
-
-
Packaging
Bag
Bag
Status
Active
Active
Diode Type
Standard
Schottky
Voltage - DC Reverse (Vr) (Max)
1300 V
200 V
Current - Average Rectified (Io)
3A
3A
Voltage - Forward (Vf) (Max) @ If
1 V @ 3 A
900 mV @ 3 A
Speed
Standard Recovery >500ns, >200mA (Io)
Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)
-
-
Current - Reverse Leakage @ Vr
5 μA @ 1300 V
200 μA @ 200 V
Capacitance @ Vr, F
50pF @ 4V, 1MHz
80pF @ 4V, 1MHz
Mounting Type
Through Hole
Through Hole
Package / Case
DO-201AD, Axial
DO-201AD, Axial
Supplier Device Package
DO-201AD
DO-201AD
Operating Temperature - Junction
-65 ℃ ~ 125 ℃
-65 ℃ ~ 150 ℃