TN2106N3-G
TN2106N3-G
Active
Description:  MOSFET N-CH 60V 300MA TO92-3
Manufacturer:  Microchip Technology
Datasheet:   TN2106N3-G Datasheet
History Price: $0.64000
In Stock: 41320
TN2106N3-G vs TN2130K1-G
Series
-
-
Packaging
Bag
Tape & Reel (TR)
Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
300 V
Current - Continuous Drain (Id) @ 25℃
300mA (Tj)
85mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
4.5V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 500mA, 10V
25Ohm @ 120mA, 4.5V
Vgs(th) (Max) @ Id
2V @ 1mA
2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
-
Vgs (Max)
?0V
?0V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
50 pF @ 25 V
FET Feature
-
-
Power Dissipation (Max)
740mW (Tc)
360mW (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Surface Mount
Supplier Device Package
TO-92-3
TO-236AB (SOT23)
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
TO-236-3, SC-59, SOT-23-3