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2N3501
2N3501
Active
Transistors - Bipolar (BJT) - RF
Description:  BI-POLAR SILICON TRANSISTOR NPN
Manufacturer:  Solid State
Datasheet:   2N3501 Datasheet
History Price: $0.50000
In Stock: 45600
Specification
PDF Datasheet
Compare Parts
Client Reviews
2N3501 Specification
Specification
Part No
2N3501
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
Solid State
Series
-
Packaging
Bulk
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
150V
Frequency - Transition
150MHz
Noise Figure (dB Typ @ f)
-
Gain
-
Power - Max
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Current - Collector (Ic) (Max)
300mA
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
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    Customer Reviews
    4.95 out of 5.00 stars from 112 customer reviews from all over the world
    Scarlett Lavoie
    Canada
    5 stars
    2026-03-27 12:13
    As per description. Did not have time to try them out yet.
    Vanessa Lima Ferreira
    Brazil
    5 stars
    2026-03-27 08:32
    Worked in X99 Bd4
    Adriana
    Brazil
    5 stars
    2026-03-27 00:51
    Great product. Recommend to everyone.
    Esteban Ruiz
    Spain
    5 stars
    2026-03-26 23:46
    All as usual on top!!!
    Hans-Jürgen Müller
    Germany
    5 stars
    2026-03-26 14:17
    All prima handled, fast shipping, like again, thanks!
    Zé Maria
    Brazil
    5 stars
    2026-03-26 12:10
    Excellent Product, delivery super fast. Recommend to everyone.
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