Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25℃
14.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
19mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 25 V
Power Dissipation (Max)
6.9W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
