2N4925
2N4925
Active
Description:  SMALL-SIGNAL BJT
Manufacturer:  Microchip Technology
Datasheet:   2N4925 Datasheet
History Price: $17.79000
In Stock: 5600
2N4925 Specification
Specification
Part No
2N4925
Category
Transistors - Bipolar (BJT) - Single
Manufacturer
Microchip Technology
Series
-
Packaging
Bulk
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Transistor Type
-
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
-
Frequency - Transition
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
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2N4925 Description

## Overview of Microchip Technology 2N4925

The 2N4925 is a high-voltage NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Manufactured by Microchip Technology, it is suitable for circuits that require high-voltage operation, reliable performance, and moderate current handling capabilities. The 2N4925 is widely used in industrial control, power supplies, amplifiers, and switching applications due to its robust electrical characteristics, high voltage ratings, and ease of integration into both discrete and PCB-based designs.

## Key Features

* Device Type: NPN Bipolar Junction Transistor (BJT)
* High Voltage Handling: The 2N4925 is designed to operate in circuits requiring high collector-emitter voltage, making it suitable for switching high-voltage loads.
* Package Type: TO-18 metal can package provides excellent thermal performance and durability, ideal for applications with moderate heat dissipation requirements.
* General Purpose Use: The transistor is versatile for both amplification and switching applications.

## Electrical Characteristics

* Collector-Emitter Voltage (Vceo): 120 V maximum, allowing operation in high-voltage circuits without risk of breakdown.
* Collector-Base Voltage (Vcbo): 150 V maximum, providing additional margin for high-voltage circuit design.
* Emitter-Base Voltage (Vebo): 5 V maximum, ensuring safe operation of the transistor's base-emitter junction.
* Collector Current (Ic): Maximum continuous collector current of 1 A, suitable for moderate current loads in switching and amplification circuits.
* Power Dissipation (Ptot): 0.8 W maximum at 25°C ambient temperature, with proper heatsinking, enabling reliable operation in medium-power applications.
* Current Gain (hFE): Typical DC current gain ranges from 50 to 300 depending on the collector current and voltage conditions, providing flexibility for amplification applications.
* Transition Frequency (fT): Approximately 100 MHz, making the 2N4925 capable of moderate-speed switching and analog signal processing.
* Operating Temperature Range: -65°C to +200°C junction temperature, allowing reliable operation in industrial, automotive, and harsh environment applications.

## Physical and Mechanical Characteristics

* Package: TO-18 metal can, providing a compact and robust form factor with reliable thermal dissipation.
* Lead Configuration: Standard NPN transistor pinout: emitter, base, and collector for easy integration into circuits.
* Thermal Resistance: Junction-to-ambient thermal resistance of approximately 200°C/W (without heatsink), allowing effective thermal management in low to moderate power applications.

## Applications

* High-Voltage Switching: Capable of switching high-voltage loads in industrial control circuits, relays, and power converters.
* Amplification: Suitable for audio and signal amplification where moderate current and high voltage tolerance are required.
* Driver Circuits: Can act as a driver for larger transistors or thyristors in control circuits.
* Power Supply Circuits: Useful in linear regulators and discrete power supply designs for both voltage amplification and switching stages.
* Industrial and Automotive Electronics: Its high-voltage and temperature tolerance make it suitable for robust industrial and automotive systems.

## Advantages

* High Voltage Capability: With collector-emitter voltage up to 120 V, it is ideal for high-voltage applications.
* Robust Thermal Performance: TO-18 metal can package ensures reliable heat dissipation under moderate power loads.
* Versatility: Functions effectively as both a switch and amplifier in a wide range of circuits.
* Wide Operating Temperature: Supports harsh environmental conditions, including industrial and automotive applications.

## Conclusion

The Microchip Technology 2N4925 is a versatile, high-voltage NPN bipolar junction transistor suitable for amplification and switching applications. It features a collector-emitter voltage of 120 V, collector current of 1 A, DC current gain between 50 and 300, and a transition frequency of 100 MHz. Its robust TO-18 metal package ensures thermal reliability, while the wide operating temperature range from -65°C to +200°C makes it appropriate for industrial, automotive, and general-purpose high-voltage applications. The 2N4925 provides a reliable, flexible, and durable solution for both analog and switching designs.
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  • Customer Reviews
    4.95 out of 5.00 stars from 112 customer reviews from all over the world
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    everything working, very fast shipping
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    Original Texas Instruments Recommend the seller product great quality.