FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
600 V
Current - Continuous Drain (Id) @ 25℃
9.6A (Ta)
8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
10V
Rds On (Max) @ Id, Vgs
520mOhm @ 7A, 10V
680mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
38.4 nC @ 10 V
46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 30 V
1200 pF @ 30 V
Power Dissipation (Max)
2W (Ta), 37W (Tc)
2W (Ta), 40W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220FI(LS)
TO-220FI(LS)
Package / Case
TO-220-3 Full Pack
TO-220-3 Full Pack
