EPC2100
EPC2100
Active
Description:  GAN TRANS ASYMMETRICAL HALF BRID
Manufacturer:  EPC
Datasheet:   EPC2100 Datasheet
History Price: $6.62000
In Stock: 40280
EPC2100 vs EPC2108
Part No
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
2 N-Channel (Half Bridge)
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
30V
60V, 100V
Current - Continuous Drain (Id) @ 25℃
10A (Ta), 40A (Ta)
1.7A, 500mA
Rds On (Max) @ Id, Vgs
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id
2.5V @ 4mA, 2.5V @ 16mA
2.5V @ 100μA, 2.5V @ 20μA
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 15V, 19nC @ 15V
0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 15V, 1960pF @ 15V
22pF @ 30V, 7pF @ 30V
Power - Max
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
Die
9-VFBGA
Supplier Device Package
Die
9-BGA (1.35x1.35)