Technical Parameter
FET Type
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
60V, 100V
Current - Continuous Drain (Id) @ 25℃
1.7A, 500mA
Rds On (Max) @ Id, Vgs
190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id
2.5V @ 100μA, 2.5V @ 20μA
Gate Charge (Qg) (Max) @ Vgs
0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 30V, 7pF @ 30V
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
9-BGA (1.35x1.35)
