EPC2105
EPC2105
Active
Description:  GAN TRANS ASYMMETRICAL HALF BRID
Manufacturer:  EPC
Datasheet:   EPC2105 Datasheet
History Price: $8.75000
In Stock: 46880
EPC2105 vs EPC2107
Part No
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
2 N-Channel (Half Bridge)
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
80V
100V
Current - Continuous Drain (Id) @ 25℃
9.5A, 38A
1.7A, 500mA
Rds On (Max) @ Id, Vgs
14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2.5mA, 2.5V @ 10mA
2.5V @ 100μA, 2.5V @ 20μA
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 5V, 10nC @ 5V
0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 40V, 1100pF @ 40V
16pF @ 50V, 7pF @ 50V
Power - Max
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
Die
9-VFBGA
Supplier Device Package
Die
9-BGA (1.35x1.35)