Technical Parameter
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25℃
9.5A, 38A
Rds On (Max) @ Id, Vgs
14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 40V, 1100pF @ 40V
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
