EPC2106
EPC2106
Active
Description:  GANFET TRANS SYM 100V BUMPED DIE
Manufacturer:  EPC
Datasheet:   EPC2106 Datasheet
History Price: $1.73000
In Stock: 48200
EPC2106 vs EPC2110
Part No
Manufacturer
Series
eGaN
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
2 N-Channel (Half Bridge)
2 N-Channel (Dual) Common Source
FET Feature
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100V
120V
Current - Continuous Drain (Id) @ 25℃
1.7A
3.4A
Rds On (Max) @ Id, Vgs
70mOhm @ 2A, 5V
60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id
2.5V @ 600μA
2.5V @ 700μA
Gate Charge (Qg) (Max) @ Vgs
0.73nC @ 5V
0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
75pF @ 50V
80pF @ 60V
Power - Max
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
-
Package / Case
Die
Die
Supplier Device Package
Die
Die