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EPC2106
EPC2106
Active
Transistors - FETs, MOSFETs - Arrays
Description:  GANFET TRANS SYM 100V BUMPED DIE
Manufacturer:  EPC
Datasheet:   EPC2106 Datasheet
History Price: $1.73000
In Stock: 48200
Specification
PDF Datasheet
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EPC2106 Specification
Specification
Part No
EPC2106
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
EPC
Series
eGaN
Packaging
Tape & Reel (TR)
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25℃
1.7A
Rds On (Max) @ Id, Vgs
70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id
2.5V @ 600μA
Gate Charge (Qg) (Max) @ Vgs
0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
75pF @ 50V
Power - Max
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
EPC2106 PDF Datasheet
EPC2106 Datasheet
Click and Download: EPC2106 Datasheet
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    Customer Reviews
    4.95 out of 5.00 stars from 136 customer reviews from all over the world
    David Scott
    Canada
    5 stars
    2026-03-26 12:00
    I appreciate, great products and good shipping, thank you.
    Aino Kallio
    Finland
    5 stars
    2026-03-26 10:13
    Tested and it worked. Everything came.
    Daniel Oliveira
    Brazil
    5 stars
    2026-03-26 08:32
    Great product as ad
    Paula Martínez
    Spain
    5 stars
    2026-03-26 01:49
    Life-long transistors for replacement
    Megan Jenkins
    United States
    5 stars
    2026-03-26 00:28
    The integrates arrived on time! 10 pieces, did not tested yet! I hope it works!
    Stijn van der Molen
    Netherlands
    5 stars
    2026-03-25 17:41
    All recieved in good condition, thank you!
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