EPC2111
EPC2111
Active
Description:  GAN TRANS ASYMMETRICAL HALF BRID
Manufacturer:  EPC
Datasheet:   EPC2111 Datasheet
History Price: $3.06000
In Stock: 26400
EPC2111 vs EPC2108
Part No
Manufacturer
Series
-
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Active
FET Type
2 N-Channel (Half Bridge)
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
30V
60V, 100V
Current - Continuous Drain (Id) @ 25℃
16A (Ta)
1.7A, 500mA
Rds On (Max) @ Id, Vgs
19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id
2.5V @ 5mA
2.5V @ 100μA, 2.5V @ 20μA
Gate Charge (Qg) (Max) @ Vgs
2.2nC @ 5V, 5.7nC @ 5V
0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
230pF @ 15V, 590pF @ 15V
22pF @ 30V, 7pF @ 30V
Power - Max
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Package / Case
Die
9-VFBGA
Supplier Device Package
Die
9-BGA (1.35x1.35)