Series
Automotive, AEC-Q101
eGaN
Packaging
Tape & Reel (TR)
Tape & Reel (TR)
Status
Active
Not For New Designs
FET Type
N-Channel
N-Channel
Technology
GaNFET (Gallium Nitride)
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
80 V
200 V
Current - Continuous Drain (Id) @ 25℃
10A (Ta)
48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
5V
Rds On (Max) @ Id, Vgs
20mOhm @ 6A, 5V
10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2mA
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
2.2 nC @ 5 V
8.8 nC @ 5 V
Vgs (Max)
+6V, -4V
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
238 pF @ 40 V
950 pF @ 100 V
Power Dissipation (Max)
-
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
Die
Die
