Technical Parameter
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25℃
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
238 pF @ 40 V
Power Dissipation (Max)
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
