NTE116-100
NTE116-100
Active
Description:  DIODE GP 600V 1A DO41 100/PKG
Manufacturer:  NTE Electronics
Datasheet:   NTE116-100 Datasheet
History Price: $49.60000
In Stock: 9200
NTE116-100 vs NTE648
Part No
Series
-
-
Packaging
Bag
Bag
Status
Active
Active
Diode Type
Standard
Schottky
Voltage - DC Reverse (Vr) (Max)
600 V
200 V
Current - Average Rectified (Io)
1A
3A
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 1 A
900 mV @ 3 A
Speed
Standard Recovery >500ns, >200mA (Io)
Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)
-
-
Current - Reverse Leakage @ Vr
10 μA @ 600 V
200 μA @ 200 V
Capacitance @ Vr, F
-
80pF @ 4V, 1MHz
Mounting Type
Through Hole
Through Hole
Package / Case
DO-204AL, DO-41, Axial
DO-201AD, Axial
Supplier Device Package
DO-41
DO-201AD
Operating Temperature - Junction
-65 ℃ ~ 175 ℃
-65 ℃ ~ 150 ℃