Technical Parameter
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 4 A
Speed
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
20 μA @ 1200 V
Capacitance @ Vr, F
302pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
