K4B4G0846E-BCNB
K4B4G0846E-BCNB
Active
Description:  IC DRAM DDR3 4 Gb 2133 Mbps
Manufacturer:  Samsung Semiconductor
History Price: $0
In Stock: 32800
K4B4G0846E-BCNB Specification
Specification
Part No
K4B4G0846E-BCNB
Category
Memory
Manufacturer
Samsung Semiconductor
Series
-
Packaging
Tray
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Memory Type
Volatile
Memory Format
DRAM
Technology
DDR3
Memory Size
4 Gb
Memory Organization
512M x 8
Memory Interface
Parallel
Clock Frequency
-
Write Cycle Time - Word, Page
-
Access Time
-
Voltage - Supply
1.5 V
Operating Temperature
0 ~ 85 ℃
Mounting Type
Surface Mount
Package / Case
78 FBGA
Supplier Device Package
78 FBGA
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K4B4G0846E-BCNB Description
The Samsung Semiconductor K4B4G0846E-BCNB is a high-performance DRAM (Dynamic Random Access Memory) module designed for various applications, including consumer electronics, computing, and mobile devices. This specific model is part of Samsung%27s extensive portfolio of memory solutions, known for their reliability, speed, and efficiency. Below is a detailed overview of its specifications, features, and applications.

## Key Specifications:

1. Type:
- The K4B4G0846E-BCNB is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) module. DDR3 technology offers improved performance and lower power consumption compared to its predecessor, DDR2.

2. Capacity:
- This memory module has a capacity of 4 Gigabits (Gb), which translates to 512 Megabytes (MB) when configured in a standard memory architecture. This capacity is suitable for a variety of applications, from basic computing tasks to more demanding operations.

3. Data Rate:
- The K4B4G0846E-BCNB supports a data rate of 1066 MT/s (megatransfers per second). This data rate allows for efficient data transfer between the memory and the processor, enhancing overall system performance.

4. Organization:
- The memory is organized in a x8 configuration, meaning it has 8 bits per memory chip. This organization is common in DRAM modules and allows for efficient data handling and access.

5. Voltage:
- The operating voltage for the K4B4G0846E-BCNB is 1.5V, which is standard for DDR3 memory. This low voltage helps reduce power consumption, making it suitable for energy-efficient applications.

6. Package Type:
- The module is available in a 78-ball FBGA (Fine Ball Grid Array) package. This compact packaging allows for efficient use of space on circuit boards, making it ideal for mobile and compact devices.

7. Timing Parameters:
- The memory module has specific timing parameters, including CAS latency (CL), which is typically 7 cycles for this model. Lower CAS latency values indicate faster access times, contributing to improved performance.

8. Temperature Range:
- The K4B4G0846E-BCNB is rated for an operating temperature range of 0°C to 85°C, making it suitable for a wide range of applications, including consumer electronics and industrial devices.

9. Refresh Rate:
- The module requires periodic refreshing to maintain data integrity, with a refresh rate of 64 ms. This is standard for DRAM technology and ensures that data stored in the memory cells remains accurate.

## Features:

- High Performance: The DDR3 technology provides significant improvements in speed and bandwidth compared to previous generations, making it suitable for high-performance applications.
- Low Power Consumption: Operating at 1.5V, the K4B4G0846E-BCNB is designed for energy efficiency, which is particularly important in battery-operated devices.
- Reliability: Samsung is known for its high-quality semiconductor products, and this memory module is no exception, offering reliable performance in various environments.

## Applications:

The Samsung K4B4G0846E-BCNB memory module is used in a variety of applications, including:

- Consumer Electronics: It is commonly found in smartphones, tablets, and other portable devices, where space and power efficiency are critical.
- Computing: The module can be used in laptops and desktop computers, providing the necessary memory capacity and speed for everyday computing tasks.
- Networking Equipment: It is suitable for use in routers, switches, and other networking devices that require reliable memory for data processing.
- Industrial Applications: The module can be utilized in industrial control systems and automation equipment, where durability and performance are essential.

## Conclusion:

The Samsung Semiconductor K4B4G0846E-BCNB is a versatile and efficient DDR3 SDRAM module that meets the demands of modern electronic applications. With its combination of capacity, speed, and low power consumption, it is an excellent choice for designers and engineers looking to enhance the performance of their devices. Its reliability and performance make it a valuable component in a wide range of applications, from consumer electronics to industrial systems.
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  • Customer Reviews
    4.95 out of 5.00 stars from 84 customer reviews from all over the world
    Baptiste Royer
    France
    5 stars
    2026-03-28 19:14
    The components are well ordered in the box and correspond well to the description
    Wagner Costa Nascimento
    Brazil
    5 stars
    2026-03-28 18:39
    Perfect description, quality components and the delivery is very fast.
    Ana Beatriz
    Brazil
    5 stars
    2026-03-28 18:30
    Received. Still were not tested. Thank you
    Renata Cristina Oliveira
    Brazil
    5 stars
    2026-03-28 07:08
    Arrived fast and as described in the ad. Thank you!
    Martín Pacheco
    Spain
    5 stars
    2026-03-28 01:13
    All perfect thank you
    Hans Müller
    Germany
    5 stars
    2026-03-27 20:25
    I'm very satisfied. Good product as promised and fast delivery. The seller is trustworthy. I will buy from this shop again.