The STMicroelectronics VN750S-E is a high-performance, high-voltage, and high-current automotive-grade N-channel power MOSFET designed for various applications, particularly in automotive and industrial sectors. This device is part of STMicroelectronics%27 family of VIPower™ devices, which are known for their efficiency and reliability in power management applications. Below is a detailed introduction to the VN750S-E, including its specifications and parameters.

## Overview

The VN750S-E is designed to provide efficient power switching and control in automotive applications, such as motor control, lighting, and power distribution. It features a robust design that allows it to handle high currents and voltages while maintaining low on-resistance and minimal power loss. The device is particularly suitable for applications that require high reliability and performance under harsh conditions.

## Key Features

1. High Voltage and Current Ratings: The VN750S-E can handle a maximum drain-source voltage (VDS) of 75V and a continuous drain current (ID) of up to 30A, making it suitable for a wide range of high-power applications.

2. Low On-Resistance (RDS(on)): The device features a low on-resistance, typically around 0.025Ω at VGS = 10V, which minimizes power loss during operation and improves overall efficiency.

3. Integrated Protection Features: The VN750S-E includes built-in protection features such as thermal shutdown, overcurrent protection, and reverse battery protection, enhancing the reliability and safety of the device in automotive applications.

4. Logic Level Gate Drive: The MOSFET can be driven by standard logic levels, allowing for easy interfacing with microcontrollers and other digital devices. This feature simplifies the design of control circuits.

5. Robust Thermal Performance: The VN750S-E is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (TJ) of 150°C. This makes it suitable for use in environments with high thermal stress.

6. Automotive Qualification: The device is qualified according to AEC-Q101 standards, ensuring its reliability and performance in automotive applications.

7. Compact Package: The VN750S-E is available in a DPAK package, which provides a compact footprint while allowing for effective heat dissipation.

## Specifications

- Type: N-channel power MOSFET
- Maximum Drain-Source Voltage (VDS): 75V
- Continuous Drain Current (ID): 30A (at 25°C)
- Pulsed Drain Current (IDM): 60A
- On-Resistance (RDS(on)):
- 0.025Ω (at VGS = 10V)
- 0.035Ω (at VGS = 4.5V)
- Gate Threshold Voltage (VGS(th)): 1.5V to 2.5V
- Total Gate Charge (Qg): 30 nC (typical at VGS = 10V)
- Maximum Power Dissipation (PD): 62W (at 25°C)
- Operating Temperature Range: -40°C to +150°C
- Package Type: DPAK

## Applications

The VN750S-E is suitable for a wide range of applications, including:

- Automotive power management (e.g., power distribution, motor control)
- LED lighting control
- Battery management systems
- Industrial automation and control systems
- Power supplies and converters

## Conclusion

The STMicroelectronics VN750S-E is a robust and efficient N-channel power MOSFET that meets the demands of modern automotive and industrial applications. With its high voltage and current ratings, low on-resistance, and integrated protection features, it is an excellent choice for power management and control applications. Its compatibility with logic-level gate drives and compact package design further enhance its usability in various electronic systems. Whether used in automotive power distribution, motor control, or industrial automation, the VN750S-E delivers reliable performance and efficiency, ensuring optimal operation in diverse scenarios.