Technical Parameter
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500μA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Mounting Type
Surface Mount
Supplier Device Package
UMT3F
