Technical Parameter
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.55 V @ 8 A
Speed
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
160 μA @ 600 V
Capacitance @ Vr, F
291pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack
Supplier Device Package
TO-220FM
Operating Temperature - Junction
175 ℃ (Max)