Technical Parameter
Driven Configuration
Low-Side
Gate Type
IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply
4.5V ~ 35V
Logic Voltage - VIL, VIH
0.8V, 3V
Current - Peak Output (Source, Sink)
4A, 4A
High Side Voltage - Max (Bootstrap)
-
Rise / Fall Time (Typ)
9ns, 8ns
Operating Temperature
-40 ℃ ~ 125 ℃ (TA)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package
8-SOIC-EP
