H9HCNNNFBMBLPR-NEE
H9HCNNNFBMBLPR-NEE
Active
Description:  IC DRAM LPDDR4X 8GB 4266Mbps
Manufacturer:  SK Hynix
History Price: $0
In Stock: 45580
H9HCNNNFBMBLPR-NEE Specification
Specification
Part No
H9HCNNNFBMBLPR-NEE
Category
Memory
Manufacturer
SK Hynix
Series
-
Packaging
Tray
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Memory Type
Volatile
Memory Format
DRAM
Technology
LPDDR4X
Memory Size
8GB
Memory Organization
-
Memory Interface
Parallel
Clock Frequency
-
Write Cycle Time - Word, Page
-
Access Time
-
Voltage - Supply
1.8V / 1.1V / 0.6V
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
432Ball
Supplier Device Package
432Ball
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H9HCNNNFBMBLPR-NEE Description
The SK Hynix H9HCNNNFBMBLPR-NEE is a high-performance NAND flash memory chip designed for a variety of applications, including consumer electronics, mobile devices, and industrial applications. This memory device is part of SK Hynix%27s extensive portfolio of NAND flash products, which are known for their reliability, speed, and efficiency. Below is a detailed overview of its specifications, features, and potential applications.

## Overview

The H9HCNNNFBMBLPR-NEE is a 3D NAND flash memory chip that utilizes advanced technology to provide high storage density and improved performance. It is designed to meet the demands of modern applications that require fast data access and high endurance. The device is suitable for use in a wide range of products, from smartphones and tablets to solid-state drives (SSDs) and embedded systems.

## Key Features

1. 3D NAND Technology: The H9HCNNNFBMBLPR-NEE employs 3D NAND technology, which stacks memory cells vertically to increase storage density and improve performance compared to traditional 2D NAND.

2. High Storage Capacity: This memory chip offers a significant storage capacity, making it suitable for applications that require large amounts of data storage.

3. Fast Data Transfer Rates: The device supports high-speed data transfer rates, enabling quick read and write operations, which is essential for applications that demand rapid data access.

4. Low Power Consumption: The H9HCNNNFBMBLPR-NEE is designed to operate with low power consumption, making it ideal for battery-powered devices and energy-efficient applications.

5. Enhanced Reliability: The chip features advanced error correction and wear leveling algorithms, which enhance the reliability and longevity of the memory, ensuring consistent performance over time.

6. Wide Operating Temperature Range: The device is designed to operate in a wide temperature range, making it suitable for various environments, including industrial applications.

7. Small Form Factor: The H9HCNNNFBMBLPR-NEE is available in a compact package, facilitating easy integration into space-constrained designs.

## Specifications

- Part Number: H9HCNNNFBMBLPR-NEE
- Memory Type: 3D NAND Flash
- Storage Capacity: Typically available in capacities ranging from 64GB to 512GB (exact capacity may vary based on specific product variants).
- Interface: ONFI (Open NAND Flash Interface) or similar interface for compatibility with various controllers.
- Data Transfer Rate: Up to 400 MB/s (varies based on specific configurations and usage scenarios).
- Endurance: Typically rated for a certain number of program/erase cycles (e.g., 3000 cycles), ensuring long-term reliability.
- Operating Voltage: Typically operates at 3.3V.
- Operating Temperature Range: -40°C to +85°C (specific ranges may vary based on application requirements).
- Package Type: BGA (Ball Grid Array) or similar compact packaging for efficient integration.

## Applications

The SK Hynix H9HCNNNFBMBLPR-NEE is suitable for a variety of applications, including:

- Consumer Electronics: Used in smartphones, tablets, and other portable devices that require high-capacity storage solutions.

- Solid-State Drives (SSDs): Ideal for SSDs in both consumer and enterprise applications, providing fast data access and high reliability.

- Embedded Systems: Suitable for embedded applications in automotive, industrial, and medical devices that require robust storage solutions.

- IoT Devices: Can be utilized in Internet of Things (IoT) applications, enabling efficient data storage and processing in connected devices.

- Gaming Consoles: Used in gaming consoles and high-performance computing devices that demand fast and reliable storage.

## Conclusion

The SK Hynix H9HCNNNFBMBLPR-NEE is a high-performance NAND flash memory chip that meets the demands of modern applications requiring fast data access, high storage capacity, and reliability. With its advanced 3D NAND technology, low power consumption, and wide operating temperature range, it is an excellent choice for a variety of applications, from consumer electronics to industrial systems. For specific applications and detailed performance characteristics, it is recommended to consult the manufacturer%27s datasheet and technical documentation.
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  • H9HCNNNFBMBLPR-NEE FAQ
    Q1: What is the SK Hynix H9HCNNNFBMBLPR-NEE designed for?
    A: The SK Hynix H9HCNNNFBMBLPR-NEE is a high-performance LPDDR4 DRAM memory module designed for mobile, embedded, and high-efficiency computing applications. It provides fast, low-power memory access, enabling smooth performance for smartphones, tablets, and portable devices.

    Q2: What types of devices can the SK Hynix H9HCNNNFBMBLPR-NEE support?
    A: This LPDDR4 memory is suitable for smartphones, tablets, ultra-thin laptops, IoT devices, automotive infotainment systems, and other embedded platforms that require high-speed and low-power memory solutions.

    Q3: How does the SK Hynix H9HCNNNFBMBLPR-NEE enhance system performance?
    A: The H9HCNNNFBMBLPR-NEE offers high data bandwidth, low latency, and efficient memory operations, improving multitasking performance, app responsiveness, and overall system throughput in memory-intensive applications.

    Q4: What memory capacity does the SK Hynix H9HCNNNFBMBLPR-NEE provide?
    A: The module provides 4Gb (gigabit) density per die, supporting sufficient memory space for mobile and embedded applications that require high-speed temporary data storage.

    Q5: What interface does the SK Hynix H9HCNNNFBMBLPR-NEE use?
    A: It uses a 16-bit wide LPDDR4 interface, optimized for mobile and embedded system memory controllers to deliver high data rates and energy-efficient performance.

    Q6: Can the SK Hynix H9HCNNNFBMBLPR-NEE operate under low-power conditions?
    A: Yes, LPDDR4 technology allows low operating voltage and efficient power management, reducing battery consumption in portable devices without compromising performance.

    Q7: How fast is the SK Hynix H9HCNNNFBMBLPR-NEE in data transfer?
    A: It supports high-speed data rates up to 3200 MT/s (megatransfers per second), enabling rapid read/write operations and efficient handling of high-bandwidth applications like multimedia streaming and gaming.

    Q8: Can the SK Hynix H9HCNNNFBMBLPR-NEE operate in extreme temperatures?
    A: Yes, it is designed for extended industrial and commercial temperature ranges, typically from -40°C to +85°C, ensuring stable performance in harsh environmental conditions.

    Q9: How does the SK Hynix H9HCNNNFBMBLPR-NEE manage data integrity?
    A: The device incorporates robust internal architecture with signal integrity and reliability features, ensuring accurate data storage and reducing the likelihood of errors in high-speed applications.

    Q10: How compact is the SK Hynix H9HCNNNFBMBLPR-NEE?
    A: It is available in a small PoP (Package on Package) or FBGA format, enabling integration into space-constrained mobile devices and embedded systems.

    Q11: Can the SK Hynix H9HCNNNFBMBLPR-NEE support multitasking applications?
    A: Yes, its high data bandwidth and low latency allow seamless multitasking, supporting multiple applications or processes simultaneously without performance degradation.

    Q12: How does the SK Hynix H9HCNNNFBMBLPR-NEE ensure low power consumption in standby mode?
    A: The LPDDR4 memory uses low-power standby modes and self-refresh operations, maintaining memory retention while minimizing energy consumption during idle periods.

    Q13: Can the SK Hynix H9HCNNNFBMBLPR-NEE handle high-speed multimedia processing?
    A: Yes, its high data rate and wide interface enable efficient streaming, video playback, and high-resolution graphics processing in mobile and embedded devices.

    Q14: How reliable is the SK Hynix H9HCNNNFBMBLPR-NEE in continuous operation?
    A: The device is designed for long-term reliability in 24/7 operation scenarios, ensuring stable performance in smartphones, automotive systems, and embedded platforms.

    Q15: How does the SK Hynix H9HCNNNFBMBLPR-NEE support automotive applications?
    A: Its extended temperature tolerance, low-power operation, and high data reliability make it suitable for automotive infotainment, ADAS, and navigation systems requiring robust memory performance.

    Q16: Can the SK Hynix H9HCNNNFBMBLPR-NEE support high-density mobile applications?
    A: Yes, with its high-density design and multi-bank architecture, it enables memory-intensive applications such as 4K video processing, gaming, and AI-assisted computing.

    Q17: How does the SK Hynix H9HCNNNFBMBLPR-NEE handle data retention during power fluctuations?
    A: It incorporates internal retention and refresh mechanisms to ensure data is preserved during low-power or temporary voltage fluctuations, enhancing system stability.

    Q18: Can the SK Hynix H9HCNNNFBMBLPR-NEE operate in IoT and wearable devices?
    A: Yes, its low-power LPDDR4 design makes it highly suitable for IoT sensors, wearable electronics, and other portable devices where energy efficiency is critical.

    Q19: How does the SK Hynix H9HCNNNFBMBLPR-NEE support fast boot and application launch?
    A: The high-speed memory access, low latency, and parallel data handling allow quick retrieval of operating system and application data, accelerating device startup and responsiveness.

    Q20: Why is the SK Hynix H9HCNNNFBMBLPR-NEE considered a reliable memory solution?
    A: The H9HCNNNFBMBLPR-NEE combines high data bandwidth, low latency, low power consumption, extended temperature range, and robust reliability features, making it ideal for smartphones, automotive systems, embedded computing, and IoT devices that demand efficient and dependable memory performance.
    Customer Reviews
    4.95 out of 5.00 stars from 117 customer reviews from all over the world
    Maria Schneider
    Germany
    5 stars
    2026-03-31 12:15
    Delivery time cn---> D ='s day Super! Product very well packed and works best-E.G. As a replacement for the solar lamps chip "ZX808"; very good also the product description
    Stefano Rizzo
    Italy
    5 stars
    2026-03-31 09:55
    Perfect thank you
    Clément Boucher
    France
    5 stars
    2026-03-31 06:37
    Very well received
    Yago Santos Ferreira
    Brazil
    5 stars
    2026-03-31 06:15
    Always ask components from this seller. Very recommended.
    Michelle Flores
    United States
    5 stars
    2026-03-31 04:10
    100pcs ordered, 100pcs received. Sample tests good. Recommended!
    Anna Sørensen
    Denmark
    5 stars
    2026-03-31 03:29
    At last a place where the tl431 works as intended, took random 10 pcs of the 100 and testet in a circuit from datasheet all spot on 5.085v where it should be.