EP4CE10E22I7N
EP4CE10E22I7N
Active
Description:  IC FPGA 91 I/O 144EQFP
Manufacturer:  Intel
History Price: $48.88000
In Stock: 36800
EP4CE10E22I7N Specification
Specification
Part No
EP4CE10E22I7N
Category
Embedded - FPGAs (Field Programmable Gate Array)
Manufacturer
Intel
Series
Cyclone IV E
Packaging
Tray
Status
Active
Environmental Compliance
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
HS Code
-
Technical Parameter
Programmable
Not Verified
Number of LABs/CLBs
645
Number of Logic Elements/Cells
10320
Total RAM Bits
423936
Number of I/O
91
Number of Gates
-
Voltage - Supply
1.15V ~ 1.25V
Mounting Type
Surface Mount
Operating Temperature
-40 ℃ ~ 100 ℃ (TJ)
Package / Case
144-LQFP Exposed Pad
Supplier Device Package
144-EQFP (20x20)
EP4CE10E22I7N PDF Datasheet
EP4CE10E22I7N Related Parts
EP4CE10E22A7N
EP4CE10E22A7N
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22C6
EP4CE10E22C6
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22C6N
EP4CE10E22C6N
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22C7
EP4CE10E22C7
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22C7N
EP4CE10E22C7N
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22C8
EP4CE10E22C8
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22C8L
EP4CE10E22C8L
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22C8LN
EP4CE10E22C8LN
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22C8N
EP4CE10E22C8N
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22C9L
EP4CE10E22C9L
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22C9LN
EP4CE10E22C9LN
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22I7
EP4CE10E22I7
Intel
IC FPGA 91 I/O 144EQFP
EP4CE10E22I7N Description
Introduction
The Intel EP4CE10E22I7N is a member of the Cyclone IV E FPGA family, a low-cost, low-power programmable logic device fabricated on a 60 nm process. This device delivers balanced resources for cost-sensitive applications requiring moderate logic density, embedded memory, and digital signal processing capabilities without high-speed transceivers. The ordering code breaks down as follows: EP4CE10 indicates the Cyclone IV E device with 10,320 logic elements, E22 denotes the 144-pin EQFP package with exposed pad, I7 specifies the industrial speed grade and temperature range, and N confirms RoHS compliance.

Architecture and Core Fabric
Each logic element (LE) consists of a four-input look-up table (LUT), a programmable register, carry chain logic, and register chain support. Logic elements are grouped into logic array blocks (LABs) of 16 LEs each, with local interconnects and direct links to adjacent memory and multiplier blocks for efficient routing. The architecture supports normal mode for general logic and arithmetic mode for adders and counters via dedicated carry chains. Embedded memory uses M9K blocks configurable as single-port RAM, simple dual-port RAM, true dual-port RAM, FIFO buffers, ROM, or shift registers, with features including byte enables, parity bits, mixed-width support, and power-down options. Embedded multipliers operate as 18×18 or two independent 9×9 units with input/output registers and signed/unsigned control. Clock management relies on two general-purpose phase-locked loops (PLLs) and ten global clock networks (GCLKs), enabling dynamic reconfiguration, phase shifting, and spread-spectrum clocking. The device lacks dedicated high-speed transceivers, relying instead on core-fabric LVDS SERDES for differential interfaces up to 840 Mbps transmit and 875 Mbps receive.

Resource Specifications
The EP4CE10E22I7N provides the following key resources:
- Logic elements (LEs): 10,320
- Embedded memory: 414 Kbits (423,936 total RAM bits)
- Embedded 18×18 multipliers: 23 (configurable as up to 46 9×9 multipliers)
- General-purpose PLLs: 2
- Global clock networks: 10
- User I/O banks: 8
- Maximum user I/Os (across all packages): 179
In the specific 144-pin EQFP package of this device, user I/Os are limited to 91 pins, with 21 LVDS pairs supported.

Package and Pin Configuration
The device is housed in a 144-pin EQFP package with an exposed thermal/ground pad at the bottom for PCB connectivity. Package dimensions are 22 mm × 22 mm with 0.5 mm pitch. This configuration provides 91 general-purpose user I/O pins (including dedicated clock pins and dual-purpose configuration pins) and supports up to 21 LVDS pairs. The exposed pad must connect to the board ground plane. Pin migration compatibility within the family can be verified using design tools, and the package supports eight I/O banks with independent VCCIO supplies for flexible voltage standards.

Operating Conditions and Electrical Characteristics
The EP4CE10E22I7N operates at a 1.2 V core voltage (VCCINT) with a recommended range of 1.15 V to 1.25 V. I/O bank supplies (VCCIO) support 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.0 V, or 3.3 V. PLL analog supply (VCCA) is 2.5 V nominal (2.375 V to 2.625 V), and PLL digital supply (VCCD_PLL) matches the core voltage. For the I7 industrial speed grade, junction temperature (TJ) ranges from –40 °C to 100 °C. Absolute maximum ratings include VCCINT up to 1.8 V, VCCIO up to 3.75 V, and input voltages up to 4.2 V, with DC output current per pin limited to –25 mA to 40 mA. I/O leakage current stays within –10 µA to 10 µA. Bus-hold sustaining current ranges from 8 µA to 70 µA depending on VCCIO, while overdrive current reaches ±125 µA to ±500 µA. On-chip series termination (OCT) without calibration offers ±30 % to ±50 % tolerance, improving to ±10 % with calibration. Pin capacitance for typical I/O is approximately 5 pF to 8 pF, with weak pull-up resistance between 7 kΩ and 351 kΩ. Hot-socketing is supported with DC current limited to 300 µA per I/O.

Supported I/O Standards and Interfaces
The device supports a wide range of single-ended standards including 3.3 V LVTTL, 1.2 V to 3.3 V LVCMOS, PCI, PCI-X, SSTL, and HSTL, as well as differential standards such as LVDS, mini-LVDS, RSDS, BLVDS, PPDS, LVPECL, differential SSTL, and differential HSTL. All standards are available across I/O banks. External memory interfaces include SDR, DDR, and DDR2 SDRAM (up to 200 MHz for DDR2) and QDRII SRAM (up to 167 MHz), with dedicated DQS, DQ, and clock pins. LVDS SERDES achieves up to 840 Mbps transmit and 875 Mbps receive rates using core logic. Programmable I/O features include drive strength control, slew rate adjustment, bus hold, pull-up resistors, open-drain outputs, and on-chip termination.

Performance and Switching Characteristics
Core performance reaches up to 500 MHz in the fastest commercial grades, with the I7 grade delivering approximately 437.5 MHz for clock tree networks. Embedded multipliers operate at 135 MHz to 287 MHz for 18×18 mode and 175 MHz to 340 MHz for 9×9 mode. M9K memory blocks support FIFO and dual-port modes at 157 MHz to 315 MHz. PLL input frequency spans 5 MHz to 472.5 MHz depending on grade, with VCO range of 600 MHz to 1,300 MHz, lock time under 1 ms, and jitter below 300 ps period. LVDS transmitter data rates reach 840 Mbps with rise/fall times around 500 ps and TCCS skew under 200 ps. IOE delays include pad-to-core input delays of approximately 1.9 ns to 4.3 ns and register-to-pad output delays of 0.6 ns to 1.4 ns (1.0 V core reference values; actual performance scales with voltage and grade). Configuration supports DCLK frequencies up to 133 MHz in passive serial mode at 1.2 V core.

Power Consumption
Cyclone IV E devices emphasize low power through an optimized 60 nm process and features such as clock enables, memory power-down, and partial reconfiguration. Static and dynamic power vary with utilization, clock frequency, and I/O activity; designers should use Intel’s Early Power Estimator (EPE) and Quartus PowerPlay tools for accurate estimates. Typical designs achieve total power under 1.5 W for protocol bridging and similar applications, benefiting from the 1.2 V core and selective power management of unused blocks.

Configuration and Programming Options
The SRAM-based device requires configuration at power-up using schemes including Active Serial (AS), Passive Serial (PS), Fast Passive Parallel (FPP), and JTAG. Compressed bitstreams reduce file size by 35 % to 55 %. Error detection via CRC is available, with optional CRC_ERROR pin signaling. Configuration file size for the EP4CE10 is approximately 2.94 million bits uncompressed. Remote system upgrades are supported in AS and AP modes, and multi-device chaining is possible via nCEO/nCE pins. MSEL pins select the mode, with power sequencing ensuring VCCIO and VCCINT stability during ramp-up (50 µs to 50 ms standard POR).

Applications
The EP4CE10E22I7N suits high-volume, cost-sensitive designs in industrial automation, consumer electronics, wireless and wireline communications, broadcast video, and protocol bridging. Its combination of logic, memory, multipliers, and flexible I/O makes it ideal for image processing, motor control, sensor interfacing, and low-power embedded systems where transceivers are unnecessary. The industrial temperature rating and robust I/O support extend its use in harsh environments requiring reliable operation from –40 °C to 100 °C.
EP4CE10E22I7N Compare Parts
  • EP4CE10E22I7N vs EP4SGX70HF35I4N
  • EP4CE10E22I7N vs EP4SGX70HF35I4G
  • EP4CE10E22I7N vs EP4SGX70HF35I4
  • EP4CE10E22I7N vs EP4SGX70HF35I3N
  • EP4CE10E22I7N vs EP4SGX70HF35I3G
  • EP4CE10E22I7N vs EP4SGX70HF35I3
  • EP4CE10E22I7N vs EP4SGX70HF35C4N
  • EP4CE10E22I7N vs EP4SGX70HF35C4G
  • EP4CE10E22I7N vs EP4SGX70HF35C4
  • EP4CE10E22I7N vs EP4SGX70HF35C3N
  • EP4CE10E22I7N vs EP4SGX70HF35C3G
  • EP4CE10E22I7N vs EP4SGX70HF35C3
  • EP4CE10E22I7N vs EP4SGX70HF35C2N
  • EP4CE10E22I7N vs EP4SGX70HF35C2G
  • EP4CE10E22I7N vs EP4SGX70HF35C2
  • EP4CE10E22I7N vs EP4SGX70DF29I4N
  • EP4CE10E22I7N vs EP4SGX70DF29I4G
  • EP4CE10E22I7N vs EP4SGX70DF29I4
  • EP4CE10E22I7N vs EP4SGX70DF29I3N
  • EP4CE10E22I7N vs EP4SGX70DF29I3G
  • EP4CE10E22I7N vs EP4SGX70DF29I3
  • EP4CE10E22I7N vs EP4SGX70DF29C4N
  • EP4CE10E22I7N vs EP4SGX70DF29C4G
  • EP4CE10E22I7N vs EP4SGX70DF29C4
  • EP4CE10E22I7N vs EP4SGX70DF29C3N
  • EP4CE10E22I7N vs EP4SGX70DF29C3G
  • EP4CE10E22I7N vs EP4SGX70DF29C3
  • EP4CE10E22I7N vs EP4SGX70DF29C2XN
  • EP4CE10E22I7N vs EP4SGX70DF29C2XG
  • EP4CE10E22I7N vs EP4SGX70DF29C2X
  • EP4CE10E22I7N vs EP4SGX530NF45I4N
  • EP4CE10E22I7N vs EP4SGX530NF45I4G
  • EP4CE10E22I7N vs EP4SGX530NF45I4
  • EP4CE10E22I7N vs EP4SGX530NF45I3N
  • EP4CE10E22I7N vs EP4SGX530NF45I3G
  • EP4CE10E22I7N vs EP4SGX530NF45I3
  • EP4CE10E22I7N vs EP4SGX530NF45C4N
  • EP4CE10E22I7N vs EP4SGX530NF45C4G
  • EP4CE10E22I7N vs EP4SGX530NF45C4
  • EP4CE10E22I7N vs EP4SGX530NF45C3NES
  • Customer Reviews
    4.95 out of 5.00 stars from 124 customer reviews from all over the world
    Renata Cristina Oliveira
    Brazil
    5 stars
    2026-03-28 07:08
    Arrived fast and as described in the ad. Thank you!
    Martín Pacheco
    Spain
    5 stars
    2026-03-28 01:13
    All perfect thank you
    Hans Müller
    Germany
    5 stars
    2026-03-27 20:25
    I'm very satisfied. Good product as promised and fast delivery. The seller is trustworthy. I will buy from this shop again.
    Anaïs Lemoine
    France
    5 stars
    2026-03-27 15:44
    10mOhms RDSon @6V VGS instead of 3mOhms as per datasheet, unlikely genuine, but good for the price
    Patricia
    Spain
    5 stars
    2026-03-27 15:14
    Sent very fast, the good quality transistors.
    Scarlett Lavoie
    Canada
    5 stars
    2026-03-27 12:13
    As per description. Did not have time to try them out yet.